It is reported that Samsung, the world leader in advanced memory technology, has announced that it has started mass producing the industry’s first 512GB embedded eUFS 3.0 storage chip for the next-generation mobile devices with fast speed. Here, read this post to learn more information about this flash chip.
Currently, most of smartphones in the market still come with eMMC storage, which is regarded to be the slowest type of embedded storage. Although the faster Universal Flash Storage standard has been available since 2011, few handsets actually use the embedded version (eUFS).
Samsung is the notable exception since it has always been quick to put the latest eUFS flash memory in its premium phones for years now. Since eUFS 3.0 was formally launched, Samsung promised that the new version will double the read and write speeds compared to eUFS 2.1. Now, this company has announced that it has begun mass production of the 512GB eUFS 3.0 memory chip.
Samsung 512GB eUFS 3.0 Mobile Storage
According to Samsung, the embedded Universal Flash Storage 3.0 is designed for next-generation mobile devices. In line with the latest eUFS 3.0 specification, the new Samsung storage chip can deliver twice the speed of the previous eUFS storage, eUFS 2.1. As a result, future smartphones with super-large high-resolution screens would be able to provide a seamless user experience.
Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics said that the mass production of Samsung 512GB eUFS 3.0 storage chip gives a huge advantage in the next-generation mobile market where they are bringing a memory read speed that was before only on available ultra-slim laptops.
In January 2015, Samsung released the first UFS interface with eUFS 2.0 in industry, which was 1.4 times faster compared to the mobile memory standard at that time. And it was referred to as the embedded multi-media card (eMMC) 5.1. Just four years later, the newest Samsung 512GB eUFS 3.0 memory chip can match the performance of the ultra-slim notebooks today.
Sequential Read and Write Speeds
Along with the eight of Samsung’s fifth-generation 512GB V-NAND die, Samsung 512 GB eUFS 3.0 mobile storage also integrates a high-performance controller. Besides, the newest chip provides the sequential read speed of 2100 MB/s and sequential write speed of 410 MB/s.
By contrast, the read speed of the new Samsung eUFS version is double the read speed of eUFS 2.1, four times faster than the read speed of SATA solid state drive (SSD) and 20 times faster than that of a typical microSD card.
In summary, the Samsung 512GB eUFS 3.0 mobile storage can offer fast transfers. For example, you can transfer a Full HD movie to a PC from premium smartphones in about three seconds, which saves much time. Additionally, as to the write speed, it also has been improved by 50%, making it rival that of a SATA SSD.
Random Read and Write Performance
As for random read and write speeds, the new storage chip respectively provides 63,000 and 68,000 Input/Output Operations Per Second (IOPS). Compared to the current eUFS 2.1 industry specification, the random performance of the new memory chip is up to 36% faster. Besides, the random read and write speeds are nearly 630 times faster than a general microSD card.
This means that smartphones can simultaneously run a number of complex applications and achieve enhanced responsiveness, especially on next-generation mobile devices.
Availability
Reportedly, following the Samsung 512GB eUFS 3.0 mobile storage and a 128GB version that are both launching, Samsung plans to produce 1TB and 256GB models in the second half of the year. In addition, this company says that it will help other manufacturers in better delivering mobile innovations.
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