The mass production of its sixth-generation V-NAND 3D flash technology has been launched by Samsung and in the market, Samsung is the first company that introduces a single-tier chip with more than one hundred layers. You can click MiniTool to get more details.

Samsung Has Launched Sixth-Generation V-NAND SSDs

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The company's sixth-generation (1xx layer) 256-gigabit (Gb) three-position V-NAND is integrated into this drive, which can be applied to global PC OEMs.

The volume production cycle has been reduced by four months, at the same time Samsung company ensures the industry's manufacturing productivity, highest performance and power efficiency by introducing the new generation of V-NAND in just 13 months.

According to the executive vice president of Solution Product & Development at Samsung Electronics, Kye Hyun Kyung, 

“By bringing cutting-edge 3D memory technology to volume production, we are able to introduce timely memory lineups that significantly raise the bar for speed and power efficiency.”

Samsung company is going to expand the high-speed, high-capacity 512Gb V-NAND-based solutions’ market rapidly as the development cycle of next-generation V-NAND products accelerates.

The Groundbreaking Design of Samsung's Sixth-Generation V-NAND SSD

3D memory is taken to new heights since Sixth-generation V-NAND SSDs take advantage of the unique manufacturing superiority of Samsung. Samsung 6th Gen V-NAND SSDs have the fastest data transfer rate in the industry.

New V-NAND SSD increases cells in the previous 9x layer single layer structure by approximately 40% by using Samsung's unique "channel hole etching" technology.

Samsung’s SSD

This is accomplished by constructing an conductive mold stack consisting of 136 layers and then perpendicularly penetrating the cylindrical holes from top to bottom. This is how uniform 3D charge trap flash (CTF) cells are created.

NAND flash chips are often more susceptible to errors and read latency as the height of the mold stack in each cell area increases.

Samsung has adopted a speed-optimized circuit design to overcome these limitations. It achieves the fastest data transfer speeds- less than 450 microseconds (μs) write speed and less than 45μs read speed.

Compared with the previous generation, the power consumption of sixth-generation V-NAND SSDs has been reduced by more than 15%, while the performance has increased by more than 10%.

Due to this speed-optimized design, Samsung can install three current stacks without affecting chip performance or reliability to provide more than 300 layers’ next-generation V-NAND solutions.

Additionally, the number of channel holes that are required to create a 256Gb chip density is reduced by 260 million (from over 930 million to 670 million) holes. At the same time, this reduces chip size and process steps, which has increased manufacturing productivity by more than 20%.

To better meet the customers’ demands all over the world, from the next year, Samsung decides that the greater-capacity and higher-speed sixth-generation V-NAND solutions’ production will be expanded at its Pyeongtaek (Korea) campus.

This is a reference chart of Samsung V-NAND mass production timeline:

a reference chart of Samsung V-NAND mass production timeline

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Final Words

Samsung not only plans to expand its 3D V-NAND from the consumer space to the next-generation of enterprise servers, automotive markets and mobile devices with the performance and efficiency improvements of sixth-generation V-NAND flash, but also plans to produce 512Gb three-bit V-NAND SSD and eUFS this year following today's launch of the 250GB SSD.

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